Liquid crystal display and method of manufacturing the same

ABSTRACT

An exemplary embodiment provides a liquid crystal display including: a substrate; a first wire grid polarizer; a thin film transistor; a pixel electrode; a roof layer; and a plurality of microcavities. The substrate has a bottom surface and a top surface. The first wire grid polarizer is disposed on the bottom surface of the substrate. The thin film transistor is disposed on the top surface of the substrate. The pixel electrode is connected to the thin film transistor. The roof layer is disposed to face the pixel electrode. The plurality of microcavities having injection holes are formed between the pixel electrode and the roof layer, the microcavities forming a liquid crystal layer containing liquid crystal molecules.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2013-01581% filed in the Korean Intellectual PropertyOffice on Dec. 18, 2013, the entire contents of which are incorporatedherein by reference.

BACKGROUND

(a) Field

The present application relates to a liquid crystal display and amanufacturing method thereof.

(b) Description of the Related Art

A liquid crystal display as one of flat panel display devices that arebeing widely used includes two display panels, wherein field generatingelectrodes such as a pixel electrode and a common electrode are formedwith a liquid crystal layer interposed therebetween.

The liquid crystal display generates an electric field in a liquidcrystal layer by applying a voltage to the field generating electrodesto determine orientations of liquid crystal molecules of the liquidcrystal layer and control polarization of incident light, therebydisplaying an image.

A technique of forming a cavity in a pixel and filling the cavity withliquid crystals to implement a display has been developed for one of theliquid crystal displays. Although two sheets of substrates are used in aconventional liquid crystal display, this technique forms constituentelements on one substrate, thereby reducing weight, thickness, and thelike of the device.

When such a display technique is embodied, an injection hole may becapped by using a coating material or the like after a liquid crystal isinjected, and a polarizer may be attached to a top surface and a bottomsurface of a panel. However, as the panel is bent due to a stressgenerated in a substrate to which a polarizer is attached or betweencapping layers, a crack or the like is generated.

The above information disclosed in this Background section is only forenhancement of understanding of the background and therefore it maycontain information that does not form the prior art that is alreadyknown in this country to a person of ordinary skill in the art.

SUMMARY

Embodiments have been made in an effort to provide a liquid crystaldisplay and a manufacturing method thereof, in which no crack isgenerated in a substrate even when a display panel is bent.

An exemplary embodiment provides a liquid crystal display including: asubstrate; a first wire grid polarizer; a thin film transistor; a pixelelectrode; a roof layer; and a plurality of microcavities. The substratehas a bottom surface and a top surface. The first wire grid polarizer isprovided on the bottom surface of the substrate. The thin filmtransistor is provided on the top surface of the substrate. The pixelelectrode is connected to the thin film transistor. The roof layer isprovided to face the pixel electrode. The plurality of microcavitieshaving injection holes are formed between the pixel electrode and theroof layer, the microcavities forming a liquid crystal layer containingliquid crystal molecules.

The liquid crystal display may further include a capping layer providedon the roof layer, and the capping layer may cover the injection holes.

The liquid crystal display may further include a second wire gridpolarizer provided on the capping layer.

The liquid crystal display may further include a passivation layercovering the second wire grid polarizer.

The passivation layer may fill a groove of the second wire gridpolarizer.

The liquid crystal display may further include a common electrode and alower insulating layer provided between the microcavities and the rooflayer, and the lower insulating layer may be provided on the commonelectrode.

An injection hole formation region may be formed between themicrocavities, and the capping layer may cover the injection holeformation region.

The thin film transistor may be connected to a data line, and apartition wall formation portion may be formed between the microcavitiesalong an extension direction of the data line.

The liquid crystal display may further include a backlight unitconfigured to emit light provided at a lower end of the first wire gridpolarizer, and the light emitted from the backlight device may passtoward the top surface of the substrate through the first wire gridpolarizer.

The substrate may be a flexible substrate.

Another exemplary embodiment provides a manufacturing method of a liquidcrystal display as follows. A thin film transistor is formed on a topsurface of a substrate. A pixel electrode is formed to be connected tothe thin film transistor. A sacrificial layer is formed on the pixelelectrode. A roof layer is formed on the sacrificial layer. A pluralityof microcavities having injection holes are formed by removing thesacrificial layer. A liquid crystal material is injected into themicrocavities. A first wire grid polarizer is formed on a bottom surfaceof the substrate.

The manufacturing method may further include forming a capping layer onthe roof layer, and the capping layer may be formed to cover theinjection holes.

The manufacturing method may further include forming a second wire gridpolarizer on a top surface of the capping layer.

The manufacturing method may further include forming a passivation layeron the capping layer to cover the second wire grid polarizer.

The manufacturing method may further include forming a common electrodeand a lower insulating layer on the sacrificial layer, before theforming of the roof layer.

The manufacturing method may further include forming an injection holeformation region between the microcavities, and the capping layer may beformed to cover the injection hole formation region.

The injection hole formation region may be formed to extend along adirection parallel with a gate line connected to the thin filmtransistor.

The thin film transistor may be connected to a data line, and apartition wall formation portion may be formed between the microcavitiesalong an extension direction of the data line.

The substrate may be formed as a flexible substrate.

In accordance with the exemplary embodiments, no crack is generated byusing a wire grid polarizer (WGP) instead of a conventional polarizereven when a display panel is bent. Further, by forming a wire gridpolarizer at a lower end of a substrate, it is possible to reuse lightof a reflected polarization component in order to improve lightefficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view showing a liquid crystal display in accordancewith an exemplary embodiment.

FIG. 2 is a cross-sectional view taken along a line II-II of FIG. 1.

FIG. 3 is a cross-sectional view taken along a line III-III of FIG. 1.

FIG. 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18A, 18B, 18C,18D are stepwise cross-sectional views showing a manufacturing method ofa liquid crystal display in accordance with the exemplary embodiment.

FIG. 19 is a top plan view showing how light passes in the liquidcrystal display in accordance with the exemplary embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, exemplary embodiments will be described in detail withreference to the accompanying drawings. As those skilled in the artwould realize, the described embodiments may be modified in variousdifferent ways, all without departing from the spirit or scope of theembodiments. On the contrary, exemplary embodiments introduced hereinare provided to make disclosed contents thorough and complete, andsufficiently transfer the spirit of the inventive concept to thoseskilled in the art.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. It will be understood that when a layer isreferred to as being “on” another layer or substrate, it can be directlyon the other layer or substrate, or intervening elements may also bepresent. Like reference numerals designate like elements throughout thespecification.

FIG. 1 is a top plan view showing a liquid crystal display in accordancewith an exemplary embodiment. FIG. 2 is a cross-sectional view takenalong a line II-II of FIG. 1. FIG. 3 is a cross-sectional view takenalong a line III-III of FIG. 1.

Referring to FIGS. 1 to 3, a gate line 121 and a storage electrode line131 are formed on a substrate 110 formed of transparent glass orplastic. In the liquid crystal display of the present exemplaryembodiment, the substrate 110 may be flexible.

The gate line 121 includes a gate electrode 124. The storage electrodeline 131 is mainly extended in a horizontal direction, and transfers apredetermined voltage such as a common voltage Vcom. The storageelectrode line 131 includes a pair of vertical storage electrodeportions 135 a substantially extended to be perpendicular to the gateline 121, and a horizontal storage electrode portion 135 b connectingends of the pair of vertical storage electrode portions 135 a to eachother. The storage electrode portions 135 a and 135 b have a structuresurrounding a pixel electrode 191.

In the present exemplary embodiment, a first wire grid polarizer 200 isprovided on a bottom surface of the substrate 110. The first wire gridpolarizer 200 includes a first wire grid polarization pattern 205. Apassivation layer 210 is provided on the first wire grid polarizer 200.The passivation layer 210 may be located on the bottom surface of thesubstrate 110 while filling grooves of the first wire grid polarizationpattern 205. The passivation layer 210 serves to protect the first wiregrid polarization pattern 205 against the external environment. In thepresent exemplary embodiment, the first wire grid polarizer 200 having astructure in which the first wire grid polarization pattern 205 isformed with the grooves instead of a conventional film-like polarizer isprovided on the bottom surface of the substrate 110, and thus lessstress with respect to the substrate 110 is generated. Accordingly, nocrack is generated even when the substrate 110 is bent.

A gate insulating layer 140 is formed on the gate line 121 and thestorage electrode line 131. A semiconductor layer 151 provided at alower portion of a data line 171, and a semiconductor layer 154positioned at a lower portion of a source/drain electrode and at achannel portion of a thin film transistor Q, are formed on the gateinsulating layer 140.

A plurality of ohmic contacts may be formed on each of the semiconductorlayers 151 and 154, and between the data line 171 and the source/drainelectrode, but this is omitted in the drawings.

Data conductors 171, 173, and 175 including a source electrode 173, thedata line 171 connected with the source electrode 173, and a drainelectrode 175 are formed on each of the semiconductor layers 151 and 154and the gate insulating layer 140.

The gate electrode 124, the source electrode 173, and the drainelectrode 175 form the thin film transistor Q together with thesemiconductor layer 154, and a channel of the thin film transistor Q isformed on the portion of the semiconductor layer 154 between the sourceelectrode 173 and the drain electrode 175.

A first interlayer insulating layer 180 a is formed on the dataconductors 171, 173, and 175 and an exposed portion of the semiconductorlayer 154. The first interlayer insulating layer 180 a may include aninorganic insulating material such as a silicon nitride (SiN_(x)) and asilicon oxide (SiO_(x)), or an organic insulating material.

A color filter 230 and a light blocking member 220 are formed on thefirst interlayer insulating layer 180 a.

The light blocking member 220 has a lattice structure having an openingcorresponding to a region displaying an image, and is formed of amaterial preventing light from being transmitted therethrough. The colorfilter 230 is formed at an opening of the light blocking member 220. Thelight blocking member 220 includes a horizontal light blocking member220 a formed in a direction parallel to the gate line 121, and avertical light blocking member 220 b formed in a direction parallel tothe data line 171.

The color filter 230 may display one of primary colors, such as threeprimary colors including red, green, and blue. However, the colors arenot limited to the three primary colors including red, green, and blue,and the color filter 230 may also display one among a cyan-based color,a magenta-based color, a yellow-based color, and a white-based color.The color filter 230 may be formed of materials displaying differentcolors for each adjacent pixel.

A second interlayer insulating layer 180 b covering the color filter 230and the light blocking member 220 is formed on the color filter 230 andthe light blocking member 220. The second interlayer insulating layer180 b may include the inorganic insulating material, such as a siliconnitride (SiN_(x)) and a silicon oxide (SiO_(x)), or the organicinsulating material. Unlike the cross-sectional view of FIG. 2, in acase where a step is generated due to a difference in thickness betweenthe color filter 230 and the light blocking member 220, the secondinterlayer insulating layer 180 b includes an organic insulatingmaterial, so that it is possible to decrease or remove the step.

The interlayer insulating layers 180 a and 180 b have a contact hole 185extending to and exposing the drain electrode 175.

The pixel electrode 191 is provided on the second interlayer insulatinglayer 180 b. The pixel electrode 191 may be formed of a transparentconductive material such as ITO or IZO.

An overall shape of the pixel electrode 191 is a quadrangle, and thepixel electrode 191 includes cross stems configured by a horizontal stem191 a and a vertical stem 191 b crossing the horizontal stem 191 a.Further, the pixel electrode 191 is divided into four sub-regions by thehorizontal stem 191 a and the vertical stem 191 b, and each sub-regionincludes a plurality of minute branches 191 c. In the present exemplaryembodiment, the pixel electrode 191 may further include an outer stemsurrounding an outer circumference of the pixel electrode 191.

The minute branches 191 c of the pixel electrode 191 form an angle ofapproximately 40° to 45° with the gate line 121 or the horizontal stem191 a. Further, the minute branches of two adjacent sub-regions may beperpendicular to each other. Furthermore, a width of each minute branchmay be gradually increased, or a distance between the minute branches191 c may be varied.

The pixel electrode 191 includes an extension 197 which is connected ata lower end of the vertical stem 191 b and has a larger area than thevertical stem 191 b, and is physically and electrically connected withthe drain electrode 175 through the contact hole 185 at the extension197 to receive a data voltage from the drain electrode 175.

The thin film transistor Q and the pixel electrode 191 described aboveare just described as examples, and a structure of the thin filmtransistor and a design of the pixel electrode may be modified in orderto improve side visibility.

A lower alignment layer 11 is formed on the pixel electrode 191, and maybe a vertical alignment layer. The lower alignment layer 11, as a liquidcrystal alignment layer made of a material such as polyamic acid,polysiloxane, polyimide, or the like, may include at least one ofgenerally used materials.

An upper alignment layer 21 is provided at a portion facing the loweralignment layer 11, and a microcavity 305 is formed between the loweralignment layer 11 and the upper alignment layer 21. A liquid crystalmaterial including liquid crystal molecules 310 is injected into themicrocavity 305 through an injection hole 307. The microcavity 305 maybe formed in a column direction, that is, a vertical direction, of thepixel electrode 191. In the present exemplary embodiment, the alignmentmaterial forming the alignment layers 11 and 21 and the liquid crystalmaterial including the liquid crystal molecules 310 may be injected intothe microcavity 305 by using capillary force.

The microcavity 305 is divided in a vertical direction by a plurality ofinjection hole forming regions 307FP positioned at a portion overlappingthe gate line 121, and a plurality of microcavities 305 may be formedalong the direction in which the gate line 121 is extended. Each of theplurality of formed microcavities 305 may correspond to a pixel area,and the pixel areas may correspond to a region displaying an image.

In the present exemplary embodiment, since the liquid crystal materialis injected through the injection hole 307 of the microcavity 305, it ispossible to form the liquid crystal display without forming a separateupper substrate.

A common electrode 270 and a lower insulating layer 350 are positionedon the upper alignment layer 21. The common electrode 270 receives thecommon voltage, and generates an electric field together with the pixelelectrode 191 to which the data voltage is applied to determine adirection in which the liquid crystal molecules 310 positioned at themicrocavity 305 between the two electrodes are inclined. The commonelectrode 270 forms a capacitor with the pixel electrode 191 to maintainthe received voltage even after the thin film transistor is turned off.The lower insulating layer 350 may be formed of a silicon nitride(SiN_(x)) or a silicon oxide (SiO_(x)).

In the present exemplary embodiment, it is described that the commonelectrode 270 is formed on the microcavity 305, but in another exemplaryembodiment, the common electrode 270 is formed under the microcavity305, so that liquid crystal driving according to a coplanar electrode(CE) mode is possible.

A roof layer 360 is positioned on the lower insulating layer 350. Theroof layer 360 serves as a support so that the microcavity 305, which isa space between the pixel electrode 191 and the common electrode 270, isformed. The roof layer 360 may include silicon oxycarbide (SiOC), aphotoresist, or other organic materials.

An upper insulating layer 370 is provided on the roof layer 360. Theupper insulating layer 370 may come into contact with an upper surfaceof the roof layer 360. The upper insulating layer 370 may be formed of asilicon nitride (SiN_(x)) or a silicon oxide (SiO_(x)).

In the exemplary embodiment, a capping layer 390 fills the liquidcrystal injection hole formation region 307FP and covers the liquidcrystal injection hole 307 of the microcavity 305 exposed by the liquidcrystal injection hole formation region 307FP. The capping layer 390includes an organic material or an inorganic material.

In the present exemplary embodiment, since a partition wall structuresuch as the partition wall formation portion PWP exists between themicrocavities 305, even if the insulation substrate 110 is bent,generated stress is small, and a change degree of a cell gap may beconsiderably reduced.

In the present exemplary embodiment, a second wire grid polarizer 400including a second wire grid polarization pattern 405 is provided on atop surface of the capping layer 390.

A passivation layer 410 is provided on the second wire grid polarizer400. The passivation layer 410 may be located on the capping layer 390while filling grooves of the second wire grid polarization pattern 405.The passivation layer 410 serves to protect the second wire gridpolarization pattern 405 against the external environment.

In the present exemplary embodiment, as shown in FIG. 3, a partitionwall formation portion PWP is positioned between the microcavities 305adjacent to each other in a horizontal direction. The partition wallformation portion PWP may be formed in an extending direction of thedata line 171, and may be covered by the roof layer 360. The lowerinsulating layer 350, the common electrode 270, the upper insulatinglayer 370, and the roof layer 360 are filled in the partition wallformation portion PWP, and the structure forms the partition wall topartition or define the microcavity 305. In the present exemplaryembodiment, since a partition wall structure such as the partition wallformation portion PWP exists between the microcavities 305, even if theinsulation substrate 110 is bent, generated stress is small, and achange degree of a cell gap may be considerably reduced.

Hereinafter, a manufacturing method of the aforementioned liquid crystaldisplay will be described with reference to FIG. 4 to FIG. 18D inaccordance with another exemplary embodiment. The following exemplaryembodiment may be modified into other methods as an exemplary embodimentof the manufacturing method.

FIG. 4 to FIG. 17 are stepwise cross-sectional views showing themanufacturing method of the liquid crystal display in accordance withthe present exemplary embodiment. FIGS. 4, 6, 8, 10, 11, 13, 15, 16, and17 sequentially show the cross-sectional views taken along the lineII-II of FIG. 1. FIGS. 5, 7, 9, 12, and 14 sequentially show thecross-sectional views taken along the line III-III of FIG. 1.

Referring to FIG. 1, FIG. 4, and FIG. 5, in order to form a generallyknown switching element on a substrate 110, the gate line 121 extendedin the horizontal direction is formed, and the gate insulating layer 140is formed on the gate line 121, the semiconductor layers 151 and 154 areformed on the gate insulating layer 140, and the source electrode 173and the drain electrode 175 are formed. In this case, the data line 171connected with the source electrode 173 may be formed to be extended inthe vertical direction while crossing the gate line 121.

The first interlayer insulating layer 180 a is formed on the dataconductors 171, 173, and 175 including the source electrode 173, thedrain electrode 175, and the data line 171, and the exposed portion ofthe semiconductor layer 154.

The color filter 230 is formed at a position corresponding to the pixelarea on the first interlayer insulating layer 180 a, and the lightblocking members 220 a and 220 b are formed between the color filters230.

The second interlayer insulating layer 180 b covering the color filter230 and the light blocking member 220 is formed on the color filter 230and the light blocking member 220, and the second interlayer insulatinglayer 180 b is formed to have the contact hole 185 electrically andphysically connecting the pixel electrode 191 and the drain electrode175.

Next, the pixel electrode 191 is formed on the second interlayerinsulating layer 180 b, and a sacrificial layer 300 is formed on thepixel electrode 191. As shown in FIG. 5, an opening OPN is formed on thesacrificial layer 300 along a direction in parallel with the data line171. In a subsequent process, the common electrode 270, the lowerinsulating layer 350, the roof layer 360, and the upper insulating layer370 are filled in the open portion OPN to form the partition wallformation portion PWP.

Referring to FIG. 6 and FIG. 7, the common electrode 270, the lowerinsulating layer 350, and the roof layer 360 are sequentially formed onthe sacrificial layer 300. The roof layer 360 may be removed at theregion corresponding to the light blocking member 220 a positionedbetween the pixel areas adjacent in the vertical direction by anexposure and development process. The roof layer 360 exposes the lowerinsulating layer 350 in the region corresponding to the light blockingmember 220 a. In this case, the common electrode 270, the lowerinsulating layer 350, and the roof layer 360 fill the open portion OPNof the sacrificial layer 300 thereby forming the partition wallformation portion PWP.

Referring to FIG. 8 and FIG. 9, the upper insulating layer 370 is formedin such a way so as to cover upper portions of the roof layer 360 andthe exposed lower insulating layer 350.

Referring to FIG. 10, the upper insulating layer 370, the lowerinsulating layer 350, and the common electrode 270 are dry-etched topartially remove the upper insulating layer 370, the lower insulatinglayer 350, and the common electrode 270, thereby forming the injectionhole forming region 307FP. In this case, the upper insulating layer 370may have a structure that covers a side surface of the roof layer 360,however, is not limited thereto. The upper insulating layer 370 coveringthe side surface of the roof layer 360 may be removed so that the sidesurface of the roof layer 360 may be externally exposed.

Referring to FIG. 11 and FIG. 12, the sacrificial layer 300 is removedby an oxygen (O₂) ashing process or a wet-etching method through theinjection hole forming region 307FP. In this case, the microcavities 305having the injection holes 307 are formed. The microcavities 305 are ina state of an empty space according to the removal of the sacrificiallayer 300.

Referring to FIG. 13 and FIG. 14, the alignment layers 11 and 21 areformed on the pixel electrode 191 and the common electrode 270 byinjecting an aligning material through the injection holes 307. To thatend, a baking process is performed after injecting the aligning materialcontaining a solid content and a solvent through the injection holes 307

Next, the liquid crystal material including the liquid crystal molecules310 is injected into the microcavities 305 through the injection holes307 by using an inkjet method and the like.

Referring to FIG. 15, the capping layer 390 is formed on the upperinsulating layer 370 to cover the liquid crystal injection hole 307. Thecapping layer 390 may cover the liquid crystal injection hole formingarea 307FP. The capping layer 390 may be formed by pushing a cappingmaterial from one edge of the substrate 110 to an opposite edge thereofusing a bar coater, and then at the same time, curing the cappingmaterial using ultraviolet rays.

Referring to FIG. 16, a mold 600 having microgrooves 610 is formed onthe capping layer 390. Transfer materials 620 are provided between themicrorogrooves 610 of the mold 600. The transfer materials 620 may bematerials obtained by adding silver (Ag) nanoparticles, aluminumnanoparticles, or the like to a resin. Although not shown, a mold inwhich microgrooves are formed in a direction perpendicular to theextension direction of the microgrooves 610 of the mold 600 disposed onthe capping layer may be disposed to correspond to the bottom surface ofthe substrate 110.

Referring to FIG. 17, the first wire grid polarizer 200 including thefirst wire grid polarization pattern 205 is formed on the bottom surfaceof the substrate 110, and the second wire grid polarizer 400 includingthe second wire grid polarization pattern 405 is formed on the cappinglayer 390. The first wire grid polarization pattern 205 and the secondwire grid polarization pattern 405 may be formed in directionsperpendicular to each other.

A method of forming the wire grid polarizers 200 and 400 will bedescribed with reference to FIG. 18.

FIGS. 18A to 18D show stepwise cross-sectional views of the method offorming the first wire grid polarizer 200 or the second wire gridpolarizer 400.

Referring to FIGS. 18A to 18D, the mold 600 having microgrooves 610 isprepared. The transfer materials 620 obtained by adding the Agnanoparticles or the aluminum nanoparticles are formed inside themicrogrooves 610. The mold 600 is disposed on the bottom surface of thesubstrate 110, and heat or light is applied thereto. The transfermaterials 620 are transferred and hardened to form the first wire gridpolarization pattern 205 on the bottom surface of the substrate 110. Inthe same way, the second wire grid polarization pattern 405 can beformed on a top surface of the capping layer 390. However, the firstwire grid polarization pattern 205 and the second wire grid polarizationpattern 405 may be formed in directions perpendicular to each other.

The method of forming the first wire grid polarization pattern 205 andthe second wire grid polarization pattern 405 may be performed by usingvarious methods such as a photolithography method, a nano-imprintmethod, and an electrohydrodynamic (EHD) printing method without therestriction to the printing method shown in FIGS. 18A to 18D.

Thereafter, the passivation layers 210 and 410 can be respectivelyformed on the first wire grid polarization pattern 205 and the secondwire grid polarization pattern 405 to form the liquid crystal displayshown in FIG. 2.

FIG. 19 is a top plan view showing how light passes in the liquidcrystal display in accordance with the exemplary embodiment.

A backlight device 50 may be disposed to corresponding to the bottomsurface of the substrate 110. Light emitted from the backlight device 50can pass toward the top surface of the substrate 110 through the firstwire grid polarizer 200.

The first wire grid polarization pattern 205 of the first wire gridpolarizer 200 is made of a high-reflectance material, and thus the lightcan be reused by increasing light reflection efficiency. For example,the light reflection efficiency can be improved by allowing a P wave ofthe light to pass therethrough and an S wave thereof to be reflected forreuse.

While the inventive concept has been described in connection with whatis presently considered to be practical exemplary embodiments, it is tobe understood that the inventive concept is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements

<Description of Symbols> 300 sacrificial layer 310 liquid crystalmolecule 305 microcavity 307 injection hole 350 lower insulating layer360 roof layer 370 upper insulating layer 390 capping layer

What is claimed is:
 1. A liquid crystal display comprising: a substratehaving a bottom surface and a top surface; a first wire grid polarizerdisposed on the bottom surface of the substrate; a thin film transistordisposed on the top surface of the substrate; a pixel electrodeconnected to the thin film transistor; a roof layer disposed to face thepixel electrode; and a plurality of microcavities having injection holesformed between the pixel electrode and the roof layer, the microcavitiesforming a liquid crystal layer containing liquid crystal molecules. 2.The liquid crystal display of claim 1, further comprising a cappinglayer disposed on the roof layer, wherein the capping layer covers theinjection holes.
 3. The liquid crystal display of claim 2, furthercomprising a second wire grid polarizer disposed on the capping layer.4. The liquid crystal display of claim 3, further comprising apassivation layer covering the second wire grid polarizer.
 5. The liquidcrystal display of claim 4, wherein the passivation layer fills a grooveof the second wire grid polarizer.
 6. The liquid crystal display ofclaim 5, further comprising a common electrode and a lower insulatinglayer disposed between the microcavities and the roof layer, wherein thelower insulating layer is disposed on the common electrode.
 7. Theliquid crystal display of claim 6, wherein an injection hole formationregion is formed between the microcavities, and the capping layer coversthe injection hole formation region.
 8. The liquid crystal display ofclaim 7, wherein the thin film transistor is connected to a data line,and a partition wall formation portion is formed between themicrocavities along an extension direction of the data line.
 9. Theliquid crystal display of claim 1, further comprising a backlight unitconfigured to emit light disposed at a lower end of the first wire gridpolarizer, wherein the light emitted from the backlight device passestoward the top surface of the substrate through the first wire gridpolarizer.
 10. The liquid crystal display of claim 1, wherein thesubstrate is a flexible substrate.
 11. A manufacturing method of aliquid crystal display, the method comprising: forming a thin filmtransistor on a top surface of a substrate; forming a pixel electrode tobe connected to the thin film transistor; forming a sacrificial layer onthe pixel electrode; forming a roof layer on the sacrificial layer;forming a plurality of microcavities having injection holes by removingthe sacrificial layer; injecting a liquid crystal material into themicrocavities; and forming a first wire grid polarizer on a bottomsurface of the substrate.
 12. The manufacturing method of claim 11,further comprising forming a capping layer on the roof layer, whereinthe capping layer is formed to cover the injection holes.
 13. Themanufacturing method of claim 12, further comprising forming a secondwire grid polarizer on a top surface of the capping layer.
 14. Themanufacturing method of claim 13, further comprising forming apassivation layer on the capping layer to cover the second wire gridpolarizer.
 15. The manufacturing method of claim 14, further comprisingforming a common electrode and a lower insulating layer on thesacrificial layer, before the forming of the roof layer.
 16. Themanufacturing method of claim 15, further comprising forming aninjection hole formation region between the microcavities, wherein thecapping layer is formed to cover the injection hole formation region.17. The manufacturing method of claim 16, wherein the injection holeformation region is formed to extend along a direction parallel with agate line connected to the thin film transistor.
 18. The manufacturingmethod of claim 17, wherein the thin film transistor is connected to adata line, and a partition wall formation portion is formed between themicrocavities along an extension direction of the data line.
 19. Themanufacturing method of claim 11, wherein the substrate is formed as aflexible substrate.